„Phase Change Memory“

Suchergebnisse

1.000+ Treffer

• Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact
  Wang, Xiujun ; Song, Sannian ; Wang, Haomin ; Guo, Tianqi ; Xue, Yuan ; Wang, Ruobing ; Wang, HuiShan ; Chen, Lingxiu ; Jiang, Chengxin ; Chen, Chen ; Shi, Zhiyuan ; Wu, Tianru ; Song, Wenxiong ; Zhang, Sifan ; Watanabe, Kenji ; Taniguchi, Takashi ; Song, Zhitang ; Xie, Xiaoming
• Volatile to Non‐Volatile Switching Transition in Chalcogenides (Adv. Funct. Mater. 23/2025)
  Zhao, Zihao ; Zhang, Mengfei ; Yang, Qun ; Gotoh, Tamihiro ; Ge, Qingqin ; Shi, Nannan ; Sun, Yuting ; Zhao, Jiayi ; Sui, Yanping ; Jiang, Ran ; Yu, Haibin ; Elliott, Stephen R. ; Song, Zhitang ; Zhu, Min
• Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge 2 Sb 2 Te 5 Phase Change Memory (Adv. Funct. Mater. 15/2024)
  Yan, Longhao ; Wu, Qingyu ; Li, Xi ; Xie, Chenchen ; Zhou, Xilin ; Li, Yuqi ; Shi, Daijing ; Yu, Lianfeng ; Zhang, Teng ; Tao, Yaoyu ; Yan, Bonan ; Zhong, Min ; Song, Zhitang ; Yang, Yuchao ; Huang, Ru
• Phase‐Change Memory: Increasing the Atomic Packing Efficiency of Phase‐Change Memory Glass to Reduce the Density Change upon Crystallization (Adv. Electron. Mater. 9/2018)
  Wu, Qianqian ; Xu, Meng ; Xu, Kailang ; Qian, Hang ; Tong, Hao ; Cheng, Xiaomin ; Wu, Liangcai ; Xu, Ming ; Miao, Xiangshui
• Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)
  Wang, Xiujun ; Song, Sannian ; Wang, Haomin ; Guo, Tianqi ; Xue, Yuan ; Wang, Ruobing ; Wang, HuiShan ; Chen, Lingxiu ; Jiang, Chengxin ; Chen, Chen ; Shi, Zhiyuan ; Wu, Tianru ; Song, Wenxiong ; Zhang, Sifan ; Watanabe, Kenji ; Taniguchi, Takashi ; Song, Zhitang ; Xie, Xiaoming
• Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory (Small 48/2023)
  Kim, Tae Ho ; Park, Seung Woo ; Lee, Ho Jin ; Kim, Dong Hyun ; Choi, Jun Young ; Kim, Tae Geun
• Resistive Switching Memory: Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018)
  Raeis‐Hosseini, Niloufar ; Lim, Seokjae ; Hwang, Hyunsang ; Rho, Junsuk
• Memory Devices: Device‐Level Photonic Memories and Logic Applications Using Phase‐Change Materials (Adv. Mater. 32/2018)
  Cheng, Zengguang ; Ríos, Carlos ; Youngblood, Nathan ; Wright, C. David ; Pernice, Wolfram ; Bhaskaran, Harish
• Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory (Phys. Status Solidi RRL 4/2019)
  Boniardi, Mattia ; Boschker, Jos E. ; Momand, Jamo ; Kooi, Bart J. ; Redaelli, Andrea ; Calarco, Raffaella
• Trade‐Off between Multilevel Characteristics and Power Consumption of High‐Aspect‐Ratio Phase‐Change Memory
  Zhao, Ruizhe ; Tong, Hao ; Miao, Xiangshui
• Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023)
  Li, Ning ; Mackin, Charles ; Chen, An ; Brew, Kevin ; Philip, Timothy ; Simon, Andrew ; Saraf, Iqbal ; Han, Jin‐Ping ; Ghazi Sarwat, Syed ; Burr, Geoffrey W. ; Rasch, Malte ; Sebastian, Abu ; Narayanan, Vijay ; Saulnier, Nicole
• Metavalent Bonding in Layered Phase‐Change Memory Materials (Adv. Sci. 15/2023)
  Zhang, Wei ; Zhang, Hangming ; Sun, Suyang ; Wang, Xiaozhe ; Lu, Zhewen ; Wang, Xudong ; Wang, Jiang‐Jing ; Jia, Chunlin ; Schön, Carl‐Friedrich ; Mazzarello, Riccardo ; Ma, En ; Wuttig, Matthias
• Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
  Yang, Zhe ; Li, Bowen ; Wang, Jiang‐Jing ; Wang, Xu‐Dong ; Xu, Meng ; Tong, Hao ; Cheng, Xiaomin ; Lu, Lu ; Jia, Chunlin ; Xu, Ming ; Miao, Xiangshui ; Zhang, Wei ; Ma, En
• Photonic Materials: On the Molecular Mechanism of a Photo‐Responsive Phase Change Memory (Adv. Theory Simul. 5/2021)
  Amirjalayer, Saeed
• Phase‐Change Memory Films: Low‐Dimensional Single‐Cation Formamidinium Lead Halide Perovskites (FA m +2 Pb m Br 3 m +2 ): From Synthesis to Rewritable Phase‐Change Memory Film (Adv. Funct. Mater. 17/2021)
  Minh, Duong Nguyen ; Nguyen, Lan Anh Thi ; Trinh, Cong Tai ; Oh, Changjun ; Eom, Sangwon ; Vu, Thanh Van ; Choi, Jinwoo ; Sim, Jae Hyun ; Lee, Kwang‐Geol ; Kim, Jaeyong ; Cho, Seong Chan ; Lee, Sang Uck ; Cimrová, Věra ; Kang, Youngjong
• Pattern Training, Inference, and Regeneration Demonstration Using On‐Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine
  Shin, Uicheol ; Ishii, Masatoshi ; Okazaki, Atsuya ; Ito, Megumi ; Rasch, Malte J. ; Kim, Wanki ; Nomura, Akiyo ; Choi, Wonseok ; Koh, Dooyong ; Hosokawa, Kohji ; BrightSky, Matthew ; Munetoh, Seiji ; Kim, SangBum
• Impact of Eccentricity on the Performance of Nanotube Phase‐Change Memory Devices
  Singh, Arvind K. ; Durai, Suresh ; Raj, Srinivasan ; Manivannan, Anbarasu
• Phase‐Change Memory in Bi 2 Te 3 Nanowires
  Han, Nalae ; Kim, Sung In ; Yang, Jeong‐Do ; Lee, Kyumin ; Sohn, Hyunchul ; So, Hye‐Mi ; Ahn, Chi Won ; Yoo, Kyung‐Hwa
• Artificial Biphasic Synapses Based on Nonvolatile Phase‐Change Photonic Memory Cells
  Zhou, Wen ; Farmakidis, Nikolaos ; Li, Xuan ; Tan, James ; Aggarwal, Samarth ; Feldmann, Johannes ; Brückerhoff-Plückelmann, Frank ; David Wright, C. ; Pernice, Wolfram ; Bhaskaran, Harish
• Progress of the Phase-change Optical Disk Memory
  Ohta, Takeo ; Yamada, Noboru ; Yamamoto, Hiroaki ; Mitsuyu, Tsuneo ; Kozaki, Takashi ; Qiu, Jianrong ; Hirao, Kazuyuki