„Threading“
Suchergebnisse
412 Treffer
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Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires
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Three‐step growth method for high quality AlN epilayers
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Bridging Ligand Length Controls AT Selectivity and Enantioselectivity of Binuclear Ruthenium Threading Intercalators
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Using “Threading Followed by Shrinking” to Synthesize Highly Stable Dialkylammonium‐Ion‐Based Rotaxanes
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Initial DNA Interactions of the Binuclear Threading Intercalator Λ,Λ‐(μ‐bidppz (bipy) 4 Ru 2) 4+: An NMR Study with (d (CGCGAATTCGCG)) 2 †
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Carbon nanotube in a threading magnetic field: Conductance oscillations persistent current and magnetization
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Influence of surface misorientation of HPHT diamond substrates on crystal morphologies and threading dislocations propagation
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A quantum dot nucleated on the edge of a threading dislocation: elastic and electric field effects
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Dislocation Threading Through an Epitaxial Film: An Analysis Based on the Peierls-Nabarro Concept
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Threading Dislocation Densities in GaAs Grown on Reduced Area Si Substrates
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Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes
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Nanomembranes: Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes (Adv. Funct. Mater. 16/2014)
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Cu II ‐Templated Threading of a Bis‐amide‐tris‐amine Macrocycle by Substituted 2,2′‐Bipyridyl Derivatives Assisted by Strong π–π Stacking and Second‐Sphere H‐Bonding Interactions
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Cu II ‐Templated Threading of a Bis‐amide‐tris‐amine Macrocycle by Substituted 2,2′‐Bipyridyl Derivatives Assisted by Strong π–π Stacking and Second‐Sphere H‐Bonding Interactions
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e FindSite: Enhanced Fingerprint‐Based Virtual Screening Against Predicted Ligand Binding Sites in Protein Models
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Reduction of threading dislocation by recoating GaN island surface with SiN for high‐efficiency GaN‐on‐Si‐based LED
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Threading screw dislocations in GaN by the Heyd‐Scuseria‐Ernzerhof hybrid functional
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The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
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Effect of Strain in Channel on Electron Transport Properties of Ga 1− x In x Sb High Electron Mobility Transistor Structures with Strained‐Al 0.40 In 0.60 Sb/Al 0.25 In 0.75 Sb Stepped Buffer
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Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed